JPS6313352B2 - - Google Patents

Info

Publication number
JPS6313352B2
JPS6313352B2 JP54165383A JP16538379A JPS6313352B2 JP S6313352 B2 JPS6313352 B2 JP S6313352B2 JP 54165383 A JP54165383 A JP 54165383A JP 16538379 A JP16538379 A JP 16538379A JP S6313352 B2 JPS6313352 B2 JP S6313352B2
Authority
JP
Japan
Prior art keywords
electrode
source
metal electrode
region
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54165383A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5688362A (en
Inventor
Akio Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP16538379A priority Critical patent/JPS5688362A/ja
Publication of JPS5688362A publication Critical patent/JPS5688362A/ja
Publication of JPS6313352B2 publication Critical patent/JPS6313352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP16538379A 1979-12-19 1979-12-19 Vertical type power mos transistor Granted JPS5688362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16538379A JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Publications (2)

Publication Number Publication Date
JPS5688362A JPS5688362A (en) 1981-07-17
JPS6313352B2 true JPS6313352B2 (en]) 1988-03-25

Family

ID=15811336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16538379A Granted JPS5688362A (en) 1979-12-19 1979-12-19 Vertical type power mos transistor

Country Status (1)

Country Link
JP (1) JPS5688362A (en])

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631564A (en) * 1984-10-23 1986-12-23 Rca Corporation Gate shield structure for power MOS device
US4801986A (en) * 1987-04-03 1989-01-31 General Electric Company Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method
JPH0834312B2 (ja) * 1988-12-06 1996-03-29 富士電機株式会社 縦形電界効果トランジスタ
JP3150443B2 (ja) * 1992-09-10 2001-03-26 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
JPS5688362A (en) 1981-07-17

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